Ti-Si 계면의 얇은 산화막이 TiN/TiS$i_2$ 이중구조막 형성에 미치는 영향

Effects of the thin SiO$_{2}$ film at the Ti-Si interface on the formation of TiN/TiS$i_2$ bilayer

The properties of TiN/TiSi$_{2}$ bilayer formed by a rapid thermal annealing is investigated when thin SiO$_{2}$ film exists at the Ti-Si interface. The competitive reaction for the TiN/TiSi_2 bilayer occurs above 600 .deg. C. The thickness of the TiSi$_{2}$ layer decreases with increasing SiO$_{2}$ film thickness and also decreases with increasing anneal temperture When the competitive reaction for the TiN/TiSi$_{2}$ bilayer is occured by rapid thermal annealing, the composition of TiN layer represents TiN$_{x}$O$_{y}$ due to the SiO$_{2}$ layer at the Ti-Si interface but the structures of the TiN and TiSi$_{2}$ layers were not changed.d.d.