The Transactions of the Korean Institute of Electrical Engineers (대한전기학회논문지)
- Volume 45 Issue 2
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- Pages.242-248
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- 1996
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- 0254-4172(pISSN)
Effects of the thin SiO$_{2}$ film at the Ti-Si interface on the formation of TiN/TiS$i_2$ bilayer
Ti-Si 계면의 얇은 산화막이 TiN/TiS$i_2$ 이중구조막 형성에 미치는 영향
Abstract
The properties of TiN/TiSi
Keywords
- TiN/TiS$i_2$ bilayer;
- competitive reaction;
- rapid thermal annealing;
- the structure and composition of the TiN and TiS$i_2$