전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제32A권2호
- /
- Pages.66-72
- /
- 1995
- /
- 1016-135X(pISSN)
고상원 분자선 단결정 성장법을 이용한 다결정 실리콘 에미터, 자기정렬 실리콘 게르마늄 이종접합 쌍극자 트랜지스터
Polysilicon-emitter, self-aligned SiGe base HBT using solid source molecular beam epitaxy
초록
Using the Si/SiGe layer grown by solid source molecular beam epitaxy(SSMBE) on the LOCOS-patterned wafers, an emitter-base self-aligned hterojunction biplar transistor(HBT) with the polysilicon-emitter and the silicon germanium(SiGe) base has been fabricated. Trech isolation process, planarization process using a chemical-mechanical poliching, and the selectively implanted collector(SIC) process were performed. A titanium disilicide (TiSi
키워드