Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 32A Issue 1
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- Pages.129-137
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- 1995
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- 1016-135X(pISSN)
Fabrication and characteristics of AlGaAs/GaAs SABM HBTs
AlgaAs/GaAs SABM HBT의 제작 및 특성
Abstract
AlGaAs/GaAs HBTs have been fabricated using SABM (Self-Aligned Base Metal) process technique. The mesa type HBTs were fabricated through following steps: isolation implant, wet etching, metal lift-off, and airbridge interconnection process. The fabricated HBTs with 2umx10um size emitter showed a common emitter current gain of 10 at a collector current density of Jk=100kA/cm
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