Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 32A Issue 1
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- Pages.103-110
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- 1995
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- 1016-135X(pISSN)
Trench-gate SOI LIGBT with improved latch-up capability
향상된 Latch-up 특성을 갖는 트렌치 게이트 SOI LIGBT
Abstract
Trench-Gate SOI LIGBT with improved latch-up capability has been proposed and verified by MEDICI simulation. The new SOI LIGBT exhibits 6 time larger latch-up capability of the new device is almost preserved independent of lifetime. the large latch-up capability of the new SOI LIGBT may be realized due to the fact that the hole current in the new device would bypass through the shorted cathode contact without passing the p-well region under the n+ cathode. Forward voltage drop is increased by 25% when a epi thickness is 6
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