Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 32A Issue 10
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- Pages.25-34
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- 1995
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- 1016-135X(pISSN)
A Power MOSFET with Self Current Limiting Capability
전류 제한 능력을 갖는 전력 MOSFET
Abstract
A new vertical power MOSFET with over-current protection capability is proposed. The MOSFET consists of main power MOSFET cell, sensing MOSFET cell and lateral npn bipolar transistor. The proposed MOSFET may be fabricated by a conventional DMOS process without any additional fabrication step. Overcurrent state is sensed by the newly designed lateral bipolar transistor. Mixed-mode simulations proved that the overcurrent protection is achieved by the proposed MOSFET successfully with a small protection area less than 0.2 % of the total die area.
Keywords