Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 32A Issue 2
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- Pages.324-331
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- 1995
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- 1016-135X(pISSN)
Fabrication of the LDD Structure poly-Si TFT with Excimer Laser Recrystallization Process
Excimer laser로 재결정화한 LDD구조의 poly-Si TFT 제작
Abstract
The leakage current characteristics of the low temperature processed LDD structure poly-Si TFT is analyzed. The excimer laser technology was applied to the recrystallization process of poly-Si film and the maximum processing temperature was retained under 600.deg.C. From the fabricated LDD space 0.3.mu.m to 3
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