SoI-Gel법에 의한 $Pb(Zr_{0.52}Ti_{0.48})O_3$박막의 제조 및 강유전 특성

Preparation and ferroelectric properties of the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film by Sol-Gel method

  • 정장호 (광운대학교 전자재료공학과) ;
  • 박인길 (광운대학교 전자재료공학과) ;
  • 류기원 (여주전문대학 전자과) ;
  • 배선기 (인천대 전기공학과) ;
  • 이영희 (광운대 전자재료공학과)
  • 발행 : 1995.09.01

초록

In this study, Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ stock solution was made and spin-coated on the Pt/ $SiO_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were chied at 400[.deg. C] for 10[min]. The coating process was repeated 6 times and then heat-treated at 500-800[.deg. C] and 1 hour. The final thickness of the thin films were about 4800[.angs.]. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hour. Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films sintered at 700[.deg. C] for 1 hour showed good dielectric and ferroelectric properties.

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