E2M - 전기 전자와 첨단 소재 (Electrical & Electronic Materials)
- 제8권5호
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- Pages.601-605
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- 1995
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
초박막 산화막 MOS 캐패시터에서 전자파 간섭의 극성 효과
The polarity effect of electronic waves interference in the ultra thin oxide MOS capacitor
초록
This study was concerned, after the oxide films(50 [.angs.]) were grown in a furnace and the MOS capacitor fabricated, with experimental comparison and verification about the Interference Effect of Electronic Waves in the ultra thin oxide/silicon interface. The average error was about 0.8404[%] in n'gate/p-sub and about 0.2991[%] in p