Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Characteristics of Oxynitride MOS Capacitor Prepared in $N_2O$ Atmosphere of Furnace

Furnace의 $N_2O$ 분위기에서 성장시킨 Oxynitride MOS 캐패시터 특성

  • Published : 1995.11.01
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Abstract

Ultrathin oxynitride (SiOxNy) films, 8nm thick, were formed on Si(100) in furnace using O2 and N2O as reactant gas. Compared with conventional furnace grown oxide, oxynitride dielectrics show better characteristics of Qbd and I-V, and less flat-band voltage shift. Excellent diffusion barrier property to dopant (BF2) is also confirmed.

Keywords

References

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