Effects of Thermal Annealing on Dielectric and Piezoelectric Properties of Pb(Zn, Mg)1/3Nb2/3O3-PbTiO3 System in the Vicinity of Morphotropic Phase Boundary

  • Hyun M. Jang (Department of Materials Science and Engineering, Laboratory for Physical Chemistry of Dielectric Materials, Pohang University of Science and Technology (POSTECH)) ;
  • Lee, Kyu-Mann (Department of Materials Science and Engineering, Laboratory for Physical Chemistry of Dielectric Materials, Pohang University of Science and Technology (POSTECH))
  • 발행 : 1995.03.01

초록

Effects of thermal annealing on the dielectric/piezoelectric properties of $Pb(Zn, Mg)_{1/3}Nb_{2/3}O_3-PbTiO_3$ ceramics (PZMNPT) with Zn/Mg=6/4) were examined across the rhombohedral/tetragonal morphotropic phase boundary (MPB). Both the relative dielectric permittivity ($\varepsilon$r)and the piezoelectric constant($d_33$)/electromechanical coupling constant ($k_p$)were increased by thermal annealing ($800^{\circ}$~$900^{\circ}C$) after sintering at $1150^{\circ}C$ for 1 hr. Based on the dielectric analysis using the series mixing model and the concept of a random distribution of the local Curie points, the observed improvements in the dielectric and piezoelectric properties of PZMN-PT were interpreted in terms of the elimination of PbO-rich amorphous intergranular layers(~1nm) induced by thermal annealing. A concrete evidence of the presence of amorphous grain-boundary layers in the unannealed (as-sintered) specimen was obtained by examining the structure of intergranular region using a TEM.

키워드

참고문헌

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