전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제31A권10호
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- Pages.101-107
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- 1994
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- 1016-135X(pISSN)
삼층감광막구조를 이용한 미세패턴의 전자빔 묘화
Submicron Patterning in Electron Beam Lithography using Trilayer Resist
초록
The PMMA/Ge/AZ trilayer resist decreased proximity effect of backscattering electrons and corrected pattern distoration in order to from deep submicron patterns. In the experiment, the prosiemity effect is decreased by 11% and 30% for the case of 0.9
키워드