전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제31A권9호
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- Pages.104-113
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- 1994
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- 1016-135X(pISSN)
AlGaAs/GaAs HBT의 제작과 특성연구
Fabrication and Characterization of AlGaAs/GaAs HBT
초록
We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1
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