전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제31A권7호
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- Pages.76-84
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- 1994
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- 1016-135X(pISSN)
LSI급 소자 제작을 위한 3인치 GaAs MBE 에피택셜 기판의 균일도 특성 연구
A Study on Characteristics of Si doped 3 inch GaAs Epitaxial Layer Grown by MBE for LSI Application
초록
The characteristics of 3 inch wafer scale GaAs epitaxial wafer grown by molecular beam epitaxy for LSI process application were studied. The thickness and doping uniformity are characterized and discussed. The growth temperature and growth rate were
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