Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 31A Issue 6
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- Pages.107-116
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- 1994
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- 1016-135X(pISSN)
Electrical Properties of MOS Capacitors and Transistors with in-situ doped Amorphous Si Gate
증착시 도핑된 비정질 Si 게이트를 갖는 MOS 캐패시터와 트랜지스터의 전기적 특성
Abstract
In this paper, The electrical properties of MOS capacitors and transistoras with gate of in-situ doped amorphous Si and poly Si doped by POCI
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