128K$\times$8bit SRAM 메모리 다중칩 패키지 제작

A Fabrication of 128K$\times$8bit SRAM Multichip Package

  • 김창연 (서강대학교 전자공학과) ;
  • 지용 (서강대학교 전자공학과)
  • Kim, Chang-Yeon (Dept. of Elec. Eng., Sogang Univ.) ;
  • Jee, Yong (Dept. of Elec. Eng., Sogang Univ.)
  • 발행 : 1994.03.01

초록

We experimented on memory multichip modules to increase the packing density of memory devices and to improve their electrical characteristics. A 128K$\times$8bit SRAM module was made of four 32K$\times$8bit SRAM memory chips. The memory multichip module was constructed on a low-cost double sided PCB(printed circuit boared) substrate. In the process of fabricating a multichip module. we focused on the improvement of its electrical characteristics. volume, and weight by employing bare memory chips. The characteristics of the bare chip module was compared with that of the module with four packaged chips. We conducted circuit routing with a PCAD program, and found the followings: the routed area for the module with bare memory chips reduced to a quarter of that area for module with packaged memory chips. 1/8 in volume, 1/5 in weight. Signal transmission delay times calculated by using transmission line model was reduced from 0.8 nsec to 0.4 nsec only on the module board, but the coupling coefficinet was not changed. Thus, we realized that the electrical characteristics of multichip packages on PCB board be improved greatly when using bare memory chips.

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