Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 31A Issue 1
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- Pages.48-53
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- 1994
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- 1016-135X(pISSN)
An Analytical Models for Substrate Current and Gate Current Using Modified Lateral Electric Field Model for Surface-Channel PMOSFET's
수정된 수평 전개 모델을 이용한 SC-PMOSFET의 기판 전류와 게이트 전류의 해석적 모델
Abstract
In this paper, we present the analytical models for substrate current and gate current of stressed SC-PMOSFET using the change of the lateral electric field distribution due to the trapped electron. Calculated Isub and Ig of stressed SC-PMOSFET agree with experimental data. Our model can be very useful explaining the logarithmic time dependence of Isub and Ig. and also the trapped electron distribution.
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