The Transactions of the Korean Institute of Electrical Engineers (대한전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

SPICE Parameter Extraction for the IGBT

IGBT의 SPICE 파라미터 추출

  • 김한수 (서울대 대학원 전기공학과) ;
  • 조영호 (대우전자부품 하이브리드 IC팀) ;
  • 최성동 (서울대 대학원 전기공학과) ;
  • 최연익 (아주대 공대 전자공학과) ;
  • 한민구 (서울대 공대 전기공학과)
  • Published : 1994.04.01
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Abstract

The static and dynamic model of IGBT for the SPICE simulation has been successfully developed. The various circuit model parameters are extracted from the I-V and C-V characteristics of IGBT and implemented into our model. The static model of IGBT consists of the MOSFET, bipolar transistor and series resistance. The parameters to be extracted are the threshold voltage of MOSFET, current gain $\beta$ of bipolar transistor, and the series resistance. They can be extracted from the measured I-V characteristics curve. The C-V characteristics between the terminals are very important parameters to determine the turn-on and turn-off waveform. Especially, voltage dependent capacitance are polynomially approximated to obtain the exact turn-on and turn-off waveforms. The SPICE simulation results employing new model agree well with the experimental values.

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