Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 30A Issue 10
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- Pages.51-58
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- 1993
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- 1016-135X(pISSN)
Electrical Characteristics of the Poly-Si TFT using SPC Films after Si Ion Implantation
실리콘 이온 주입 후 고상 결정화 시킨 다결정 실리콘 TFT의 전기적 특성
- Lee, Byoung-Ju (Dept. of Elec. Eng., Sogang Univ.) ;
- Kim, Jae-Yeong (Dept. of Elec. Eng., Sogang Univ.) ;
- Kang, Moun-Sang (Dept. of Elec. Eng., Sogang Univ.) ;
- Koo, Yong-Seo (Dept. of Computer Eng., Seokyeong Univ.) ;
- An, Chul (Dept. of Elec. Eng., Sogang Univ.)
- Published : 1993.10.01
Abstract
N-channel TFTs fabricated on the pre-amorphized (by Si ion implantation) and recrystallized Si film having 10.1V threshold voltage, 20.7cm
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