초록
Ar ions were implanted at 1 MeV into (100)Cz Si wafers with dose of 1 * 10$^{15}$ ions/cm$^{2}$. Damage induced by high energy implantation and its annealing behavior during rapid thermal annealing for 10sec at temperatures from 550 to 1100${\circ}C$ were investigated by crosssection transmission electron microscopy study. It can be clearly seen from the observation that the SPE(Solid Phase Epitaxy) regrowth of the buried amorphous layer induced by ion implantation proceeds from both upper and lower amorphous/crystalline (a/c) interfaces, and the activation energy for SPE from interfaces were both 1.43eV. Misfit dislocation where two interfaces met was formed and it coalesced into the hair pin dislocation in the upper regrown region. At the higher temperature after annealing out of the misfit dislocation, hair pin dislocations showed considerable drop in its bandwidth. However, they were not disappeared even at the temperature 1100${\circ}C$ with the end of range dislocation loops which were formed at the original lower a/c interface.
