Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 29A Issue 11
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- Pages.91-96
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- 1992
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- 1016-135X(pISSN)
Fabrication of the Recrystallized Poly Silicon nMOSFET and Its Electrical Characteristics
재결정화된 다결정 nMOSFET의 제작 및 그 전기적 특성
- Kim, Joo-Young (Semiconductor R&D Lab., Hyundai Elec. Industries Co., Ltd.) ;
- Kang, Moun-Sang (Dept. of Elec. Eng., Sogang Univ.) ;
- Kim, Gi-Hong (Dept. of Elec. Eng., Sogang Univ.) ;
- Ku, Yong-Seo (Dept. of Elec. Eng., Sogang Univ.) ;
- An, Chul (Dept. of Elec. Eng., Sogang Univ.)
- Published : 1992.11.01
Abstract
The technology of LOCOS(LOCal Oxidation of Silicon) was used to form the island of SOI film. After this, the SOI film was recrystallized by CO
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