전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제29A권10호
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- Pages.35-41
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- 1992
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- 1016-135X(pISSN)
ECR 플라즈마에 의해 형성된 실리콘 질화막의 전기적 특성
Electrical Properties of Silicon Nitride Thin Films Formed
초록
Ultra-thin silicon nitride films were fabricated with ECR(Electron cyclotron Resonance) nitrogen plasma at room temperature. Film thickness was about 50
키워드