Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study of Deposition Properties and Characteristics of $SiO_2$T film Grown by Remote Plasma-Enhanced Chemical Vapor Deposition

Remote PECVD 산화막의 증착특성 및 박막 특성 연구

  • 정윤권 (대우센터영상연구소 연구5팀) ;
  • 정문식 (포항공과대학 전자전기공학과) ;
  • 김흥락 (산업기술연구소 반도체연구분야) ;
  • 권영규 (산업기술연구소 반도체연구분야) ;
  • 강봉구 (포항공과대학 전자전기공학과)
  • Published : 1992.08.01
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Abstract

Deposition properties and film characteristics of Remote PECVD silicon dioxide were investigated. Using $N_{2}O/SiH_{4}$, the effects of changing the process conditions` the pressure, the substrate temperature, and the gas mixing ration, on the film quality were observed. A comparison of film qualites of the Remote PECVD SiO$_2$ with that of a Direct PECVD SiO$_2$ was made. The experimental results show that the Remote PECVD SiO$_2$ has better electrical, physical, and annealing properties than the Direct PECVD oxide.

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