전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제29A권8호
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- Pages.56-62
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- 1992
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- 1016-135X(pISSN)
재산화된 질화산화막의 전하포획 특성
The Charge Trapping Properties of ONO Dielectric Films
초록
This paper is analyzed the charge trapping and electrical properties of 0(Oxide), NO(Nitrided oxide) and ONO(Reoxidized nitrided oxide) as dielectric films in MIS structures. We have processed bottom oxide and top oxide by the thermal method, and nitride(Si
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