Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 29A Issue 2
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- Pages.68-76
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- 1992
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- 1016-135X(pISSN)
A Study on the Self-Aligned Cobalt Silicidation and the Formation of a Shallow Junction by Concurrent Junction Process
동시 접합 공정에 의한 자기정렬 코발트 실리사이트 및 얇은 접합 형성에 관한 연구
Abstract
Concurrent Junction process (simultaneous formation of a silicide and a junction on the implanted substrate) by Rapid Thermal Annealig has been investigated. Electrical and material properties of CoSi
Keywords