한국진공학회지 (Journal of the Korean Vacuum Society)
- 제1권1호
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- Pages.145-152
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- 1992
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- 1225-8822(pISSN)
$CHF_3/C_2F_6$ 플라즈마에 의한 실리콘 표면 잔류막의 특성
The Characteristics of Residual Films on Silicon Surface $CHF_3/C_2F_6$ Reactive Ion Etching
초록
Si surfaces exposed to CHF3/C2F6 gas plasmas ih reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF3/C2F6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-F/H, C-CFx(x
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