The Transactions of the Korean Institute of Electrical Engineers (대한전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Optical Characteristics of ${Te}_{100-x}{Ge}_{x}$ Thin Film with Phase Change

비정질 ${Te}_{100-x}{Ge}_{x}$박막의 상변화에 의한 광특성

  • 정홍배 (광운대 공대 전자재료공학과) ;
  • 이영종 (광운대 공대 전자재료공학과) ;
  • 이현용 (광운대 대학원 전자재료공학과) ;
  • 김병훈 (전자통신연구소)
  • Published : 1992.03.01
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Abstract

In this paper, we investigated the stability of TeS1100-xTGeS1xT( x = 15,33,50 at. %) thin films by observing the transmittance and reflectance changes with annealing and exposure of diode laser(780nm). As results of transmittance changes in constant tenperature and humidity atmosphere, it was shown that TeS150TGeS150T thin film has the smallest transmittance change. From the XRD patterns, it was confirmed that the transmittance changes in TeS150TGeS150T thin film before and after annealing are due to crystalization. The transmittance changes in TeS150TGeS150T thin film with annealing are largest at diode laser wavelength and the trasmittance changes with laser exposure are decreased fast.

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