전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제28A권5호
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- Pages.375-379
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- 1991
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- 1016-135X(pISSN)
$TiSi_2$ 와 다결정 실리콘에 이온주입된 As 계에서 TiAs 침전물형성에 관한 고분해능 TEM 연구
High-Resolution TEM Study on TiAs Precipitate Formation Between $TiSi_2$ and As Doped in Poly-Silicon
초록
Formation of TiAs precipitate through the reaction between TiSi2 with C54 structure and heavily doped arsenic ion in poly-silicon, and influence of TiSAs and silicon distribution resulted from the reaction TiSi2+As ->2Si on the morphology degradation have been studied.
키워드