The Transactions of the Korean Institute of Electrical Engineers (대한전기학회논문지)
- Volume 40 Issue 6
- /
- Pages.582-589
- /
- 1991
- /
- 0254-4172(pISSN)
The Parameters Extraction in Poly TFT Using Optimization Technique
최적화 기법에 의한 다결정 TFT(Thin Film Transistor)의 매개 변수 추출
Abstract
We used Cd Se as the semiconductor to analyze the Poly-TFT. Cd Se TFT is fabricated by the vacuum evaporation method and the characteristics curves of the current-voltage are obtained using the results of measurement of Cd Se TFT devices. Employing least square method and Rosenbrock algorithm, we can extract the device parameters(grain boundary mobility, trap density). The current-voltage relations calculated by extracted parameters are in good agreement with experimental results.
Keywords