The Transactions of the Korean Institute of Electrical Engineers (대한전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Parameters Extraction in Poly TFT Using Optimization Technique

최적화 기법에 의한 다결정 TFT(Thin Film Transistor)의 매개 변수 추출

  • 김홍배 (청주대 이공대 반도체공학과) ;
  • 손상희 (청주대 이공대 반도체공학과) ;
  • 박용헌 (공군사관학교 물리과)
  • Published : 1991.06.01
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Abstract

We used Cd Se as the semiconductor to analyze the Poly-TFT. Cd Se TFT is fabricated by the vacuum evaporation method and the characteristics curves of the current-voltage are obtained using the results of measurement of Cd Se TFT devices. Employing least square method and Rosenbrock algorithm, we can extract the device parameters(grain boundary mobility, trap density). The current-voltage relations calculated by extracted parameters are in good agreement with experimental results.

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