대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제27권9호
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- Pages.1386-1392
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- 1990
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- 1016-135X(pISSN)
고주파 유도 가열에 의한 Si의 열적질화
Thermal Nitridation of Si by RF Induction Heating
초록
Characteristics of the direct thermal nitrided films by RF induction heating has been studied. The nitrided films on Si were prepared at 1000-1200\ulcorner in ammonia gas ambient. The nitrided films were analyzed by ellipsometry an Auger electron spectroscopy. I-V and C-V characteristics of MIS capacitors fabricated using nitrided film were investicated. The nitrided films were grown up mostly within initial thirty minutes and no significant growth was observed thereafter. Etch rates of films were about 1\ulcornermin in diluted HF (HF:H2O= 1:50). The nitrided films were resistant to dry and wet oxidations at temperatures below 1000\ulcorner and 900\ulcorner, respectively.
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