대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제27권7호
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- Pages.1033-1041
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- 1990
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- 1016-135X(pISSN)
GaAs Power MESFET의 항복전압에 관한 연구
A Study on Breakdown Voltage of GaAs Power MESFET's
초록
In this paper, under pinch-off conditions, the gate-drain breakdown voltage characteristics of GaAs Power MESFET's as a function of device parameters such as channel thickness, doping concentration, gate length etc. are analyzed. Using the Green's function, the gate ionic charge induced by the depleted channel ionic charge is calculated. The impact ionization integral by avalanche multiplication between gate and drain is used to investigate breakdown phenomena. Especially, the localized excess surface charge effect as well as the uniform surface charge effect on breakdown voltage is considered.
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