Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Studies on the Electrical Resistance and the Behaviors of Excess Silicon of Tungsten Silicide during Oxidation

텅스텐 실리사이드의 산화에 따른 전기저항 및 과잉실리콘의 거동에 관한 연구

  • Published : 1990.05.01
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Abstract

Effects of excess Si on the properities of the oxide of CVD tungsten silicide were investigated by comparing the characteristics of the two kinds of thermal oxide for CVD-WSi2.7 and WSi3.1 films on the polycrystalline Si film each other. It is reveraled from AES analysis that Si in the surface region of the silicide film is consumed to make composition and resistivity of the silicide film very nonuniform for the case of the oxidation of WSi3.1, while the underlayer polycrystalline Si was consumed for the case of the oxidation of WSi2.7.

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