On the development of succesive finite element code for semiconductor devices analysis

유한요소법(有限要素法)에 의한 반도체(半導體) 소자(素子) 해석(解析)의 안정화(安定化)에 관한 연구(硏究)

In the finite element analysis of semiconductor devices analysis, the solution often be diverged due to the numerical instability of discretized equations. To overcome this problems, a noble finite element code which guarantees a successful convergence is developed. The factor of divergence in the current continuity equation of semiconductor governing equations is derived using stability test and an adaptive mesh refine scheme is introduced to eliminates the divergence properties. A test calculation of GaAs MESFET model reveals that the proposed scheme has a robust self-convergence property and is suitable for the semiconductor devices analysis.