대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제26권7호
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- Pages.73-82
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- 1989
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- 1016-135X(pISSN)
직접 광여기 Photo-CVD에 의한 이산화실리콘 박막의 증착 특성
Photo-Induced Chemical Vapor Deposition of $SiO_2$ Thin Film by Direct Excitation Process
- 김윤태 (韓國電子通信硏究所, 化合物半導體硏究部) ;
- 김치훈 (韓國電子通信硏究所, 化合物半導體硏究部) ;
- 정기로 (韓國電子通信硏究所, 化合物半導體硏究部) ;
- 강봉구 (韓國電子通信硏究所, 化合物半導體硏究部) ;
- 김보우 (韓國電子通信硏究所, 化合物半導體硏究部) ;
- 마동성 (韓國電子通信硏究所, 化合物半導體硏究部)
- Kim, Youn-Tae (Compound Semiconductor Department, ETRI) ;
- Kim, Chi-Hoon (Compound Semiconductor Department, ETRI) ;
- Jung, Ki-Ro (Compound Semiconductor Department, ETRI) ;
- Kang, Bong-Ku (Compound Semiconductor Department, ETRI) ;
- Kim, Bo-Woo (Compound Semiconductor Department, ETRI) ;
- Ma, Dong-Sung (Compound Semiconductor Department, ETRI)
- 발행 : 1989.07.01
초록
실리콘계 절연박막 형성을 위한 저온공정을 개발하기 위하여 photo-CVD장치를 제작하여
We developed a photo-CVD equipment for the deposition of silicon based insulating materials. Silicon dioxide thin films were deposited at various process conditions especially low temperature range
키워드