Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 26 Issue 12
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- Pages.1995-2000
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- 1989
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- 1016-135X(pISSN)
The Ohmic Contact of n-GaAs Using by Liquid Metal Ion Source
액체금속이온원을 이용한 n형 GaAs의 오옴성 접촉
Abstract
The ion beam system of 20keV C-W (Cockroft Walton) type composed of the AuGe alloy LMIS(Liquid Metal Ion Source) has been designed and constructed. For the fabrication of the ohmic contact to the n-GaAs, the ion beam extracted from the AuGe alloy source was implanted into the n-GaAs, and it was measured by contact resistivity. The stable AuGe ion beam(2.5\ulcorner/cm\ulcorner was obtained at the extraction voltage of 14.5kV. The measurements of the contact resistivity were done by the TLM (Transmission Line Model) method and the specific contact resistivity was found to be 2.4x10**-5 \ulcornercm\ulcornerfor the implanted sample by the 1.9x10**20/cm**3 and the annealed sample at 30\ulcorner for 2 min.
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