Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Two Dimensional Numerical Analysis of HEMT's

HEMT의 2차원 수치해석

  • 이종람 (한국전자통신연구소 화합물반도체연구부) ;
  • 이재진 (한국전자통신연구소 화합물반도체연구부) ;
  • 맹성재 (한국전자통신연구소 화합물반도체연구부) ;
  • 박성호 (한국전자통신연구소 화합물반도체연구부) ;
  • 박효훈 (한국전자통신연구소 화합물반도체연구부) ;
  • 강태원 (한국전자통신연구소 화합물반도체연구부) ;
  • 김진섭 (한국전자통신연구소 화합물반도체연구부) ;
  • 마동성 (한국전자통신연구소 화합물반도체연구부)
  • Published : 1989.11.01
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Abstract

In this paper, a two-dimensional numerical analysis of HEMT's with gate length of 0.6um is performed. In this case, Control Volume Formulation method which has been used in the analysis of heat transfer and fluid flow is used as a numerical method. As a mobility model, empirical formula including the velocithy overshoot phenomena is used instead of two-piece mobility model. The results obtained from this numerical analysis(i.e., the region in which cahnnel is formed, the strength of electric field in the channel, the distribution of potential, and the distribution of electron concentration etc.)are in good agreement with the previous analytic results. And our results also show the parasitic MESFET's operation in the range of the high gate voltage.

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