The Analysis of GaAs NESFET Device by Finite Element Method

유한요소법에 의한 GaAs MESFET소자의 해석

In this work, two-dimensional finite element method code is developed to characterize GaAs MESFET devices. Here, two coupled equations, i.e., Poisson equation and current continuity equation, are solved iteratively by Gummel's scheme. The energy transport equation is incorporated with these to include the temperature information. By this method, the GaAs MESFET device is analyzed by calculating the potential and electron concentration distribution. from these the I-V characteristics and other device parametersare obtained and discussed. It is comfirmed that this method can be effectively used in the device level simulation and characterization and can be extended to the small and large signal analysis of the device.