Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Gate Capacitance Measurement on the Small-Geometry MOSFET's with Bias

Small-Geometry MOSFET에서 Bias에 따른 게이트 Capacitance 측정

  • 김천수 (한국전자통신연구소 통신소자개발실) ;
  • 김광수 (한국전자통신연구소 통신소자개발실) ;
  • 김여환 (한국전자통신연구소 통신소자개발실) ;
  • 이진효 (한국전자통신연구소 통신소자개발실)
  • Published : 1987.05.01
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Abstract

Gate capacitances have been measured directly on small-geometry MOSFET's with the drain voltage as a parameter for various channel lengths and for p and n channel types and the characteristics have been compared with each other. The influence of 'hot carrier effect' of short channel devices on capaciatance has been compared with long channel devices. The results show that gate capacitance characteristics of short channel device deviate from those of long channel device. The accuracy of the measurement system is less than a few femto Farad, and the minimum geometry (W/L) of device for which reliable measurement can be obtained is 6/3.

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