Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The Electrical Characteristics of Recrystallized Silicon by CW $CO_2$ Laser

CW $CO_2$ 레이저에 의하여 재결정화된 실리콘의 전기적 특성

  • Park, Jong Tae (Dept. of Elec. Eng., Yonsei Univ.) ;
  • Lee, Moon Key (Dept. of Elec. Eng., Yonsei Univ.) ;
  • Kim, Bong Ryul (Dept. of Elec. Eng., Yonsei Univ.)
  • 박종태 (연세대학교 전자공학과) ;
  • 이문기 (연세대학교 전자공학과) ;
  • 김봉렬 (연세대학교 전자공학과)
  • Published : 1987.01.01
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Abstract

In this study, the recrystallization of polycrystalline silicn by CW CO2 laser is reported. With a variation of CW CO2 laser power, the surface morphology of recrystallized silicon is observed by SEM and the value of resistivity and mobility is obtained by Hall measurement. From the obtained results, it is concluded that the polycrystalline silicon is locally melted at 39W laser power and the reduction of resistivity and the increase of mobility are caused by the increase of grain size and the reduction of the potentical barrier at grain boundaries.

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