Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 24 Issue 1
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- Pages.85-90
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- 1987
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- 1016-135X(pISSN)
Electrical Characteristics of Trench Capacitor with Various Structures
여러가지 구조를 갖는 Trench Capacitor의 전기적 특성
- Lee, Jin Hee (Electronics & Telecommunications Research Institute) ;
- Nam, Kee Soo (Electronics & Telecommunications Research Institute) ;
- Kim, Mal Moon (Dept. of Physics, Yeung-Nam Univ.) ;
- Park, Sin Chong (Electronics & Telecommunications Research Institute)
- 이진희 (한국전자통신연구소) ;
- 남기수 (한국전자통신연구소) ;
- 김말문 (영남대학교 이과대학 물리학과) ;
- 박신종 (한국전자통신연구소)
- Published : 1987.01.01
Abstract
Trench capacitors with four different structures were fabricated using plasma and reactive ion etching technique, and evaluated using their C-V and I-V characteristics. The results shows that the two step plasma etching technique is the best method to fabricate the trench capacitor because of its high breakdown field (~7.75 MV/Cm) and good step coverage. And the fixed oxide charges are comparable between the trench (3.6xE10/Cm\ulcorner~7.5xE10/Cm\ulcorner and the planar(4.5xE10/Cm\ulcorner~6.5E10/Cm\ulcorner capacitors.
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