대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

$1.3{$mu}$ GaInAs P/p-InP BH형 레이저의 상온 연속발진

CW Operation of $1.3{$mu}$ GaInAsP/p-InP BH Lasers at Room Temperature

  • 유태경 (한국과학기술원 전자공학과) ;
  • 정기웅 (한국과학기술원 전자공학과) ;
  • 권영세 (한국과학기술원 전자공학과) ;
  • 홍창희 (한국해양대학 전자통신공학과)
  • Yoo, Tae Kyung (Dept. of Elec. Eng., KAIST) ;
  • Chung, Gi Oong (Dept. of Elec. Eng., KAIST) ;
  • Kwon, Young Se (Dept. of Elec. Eng., KAIST) ;
  • Hong, Tchang Hee (Dept. of Electron. Comm., Korea Maritime Univ.)
  • 발행 : 1986.06.01
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초록

1.3\ulcorner GaInAsP BH(Buried Heterostructure) lasers were fabricated on the p-InP substrate. Two step chemical etching processes and melt-back etching technique during 2nd epitaxy were used for BH active layer. BH laser had the threshold current, Ith, of 72mA(23\ulcorner), peak wavelength of 1.2937\ulcorner, nd of 10-20%, and To of 85K. They operated in single mode under pulse condition up to 1.4 Ith. CW(DC) operation was successfully performed at room temperature.

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