Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 22 Issue 6
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- Pages.28-33
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- 1985
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- 1016-135X(pISSN)
Fabrication of ISFETs for Measuring Ion-Activities in Blood
혈액내의 이온활동도 측정을 위한 ISFETs의 제조
- Son, Byeong-Gi (Dept.of Electronics Engineering, Kyungpook National University) ;
- Lee, Jong-Hyeon (Dept.of Electronics Engineering, Kyungpook National University) ;
- Sin, Jang-Gyu
- Published : 1985.11.01
Abstract
ISFETS for physiological applications have been developed using the techniques for integrated circuit fabrication. The silicon nitride layer was used as a H+ sensing membrane. However, K+, Na+ and Ca++ sensing ISFETS were fabricated by forming tach specification sensing membranes over the silicon nitride gate insulator. The sensitivities of the fabricated devices were very good. The typical values of measured sentivities were iEmV/pH, 42mv1, pH,5 gmV/pNa and 28mv1p0a. However, the selectivity and stability should be somewhat improved for practical physiological uses with good reliability. The response times were, less than one second, short enough for the practical uses in physiological applications.
집복회로제조기술을 이용하여 극소형이고 초경량이며 감도, 천택도 및 안정도가 뛰어난 ISFET(lon Sensitive Field Effect Transistor)를 제조하였다. 특히 사람의 혈액속에 나타나는 중요한 4가지 이온인 H+, K+, Na+, Ca++에 대하여 각가 선택적으로 반응하는 감지막을 형성하여 H+-ISFET, K+-ISFET, Na-ISFET 및 Ca++-ISFET를 제작하였다. 이들 4가지 ISFET의 감도는 각각 52mv/pH 42mv/pk, 59mv/pNa및 28mv/pCa로 나타났으며. 1초 미만의 빠른 응답을 보였다.
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