Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 18 Issue 3
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- Pages.25-34
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- 1981
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- 1016-135X(pISSN)
A Transversal Low Pass Filter Using Charge Coupled Device with Two Level Aluminum Electrode Structure
2중 알루미늄 전극구조의 Charge Coupled Device를 이용한 저역 여파기
Abstract
Aluminum anodization method has been investigated for fabricating charge coupled device(CCD) with two-level aluminum gate structure. Al2O3 films were formed to a thickness of 400-500A, by anodizing aluminum with 30-35V of anode voltage for 2 hours using 2 % ammonium tartrate solution as an electrolyte. Breakdown voltage of these films were about 30 volts. Using above mentioned Al2O3 film as an insulator between two aluminum electrodes, CCD transversal low pass filter has been fabricated. CCD transversal low pass filter with 17 tap coefficients has shown 22 dB stop-band attenuation. The operating clock frequency range of the fabricated device was from 3 KHz to 100 KHz.
전하결합소자(charge coupled device)의 제작에 필요한 다중전극구조를 실현하기 위하여 알루미늄양극산화방법을 실험적으로 조사하였다. 양극산화의 전해질용액으로 2% ammonium tartrate를 사용하고, 산화전압을 30∼35 volt로 하여 2시간 정도 산화할 때 형성되는 Al2O3의 두께는 400∼500A이었고 절연파괴전압은 30volt 정도였다. 이와 같은 Al2O3의 성질을 이용하여 CCD transversal 저역여파기를 제작하였다. 17개의 tap coefficient를 갖는 저역파기의 stop band attenuation은 약 22dB 이었으며 사용가능한 주파수 범위는 3 KHz로부터 100KHz까지였다.
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