전기의세계
- 제26권6호
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- Pages.86-92
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- 1977
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- 1598-4613(pISSN)
비정상상태에 있는 MOS내의 경사면트랩에너지 분포에 관한 연구
A Study on the Energy Distribution of Interface Traps in MOS Devices Under Non-steady-state
초록
The phenomenon of non-steady-state current flow through the interface traps during the dielectric relaxation of MOS device is presented. Experimental method is also described for determining the energy distribution of interface traps, which is based on isothermal dielectric relaxation current technique. Actually, the energy distribution of interface traps was obtained by measuring the transient current through the traps at Si-SiO
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