전기의세계
- Volume 26 Issue 6
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- Pages.86-92
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- 1977
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- 1598-4613(pISSN)
A Study on the Energy Distribution of Interface Traps in MOS Devices Under Non-steady-state
비정상상태에 있는 MOS내의 경사면트랩에너지 분포에 관한 연구
Abstract
The phenomenon of non-steady-state current flow through the interface traps during the dielectric relaxation of MOS device is presented. Experimental method is also described for determining the energy distribution of interface traps, which is based on isothermal dielectric relaxation current technique. Actually, the energy distribution of interface traps was obtained by measuring the transient current through the traps at Si-SiO
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