AsTe계 유리반도체의 스위칭현상

Switching Phenomena of AsTe Glass Semiconductor

Electrical resistivity and switching phenomena in glass semiconductor of AsTe and AsTeGa is studied. Samples sliced from ingot which is air quenched or water quenched, show high resistivity at room temperature. The resistivity of the AsTe and AsTeGa is 1*10$^{6}$ .ohm.-cm and 5*10$^{6}$ .ohm.-cm at 27.deg. C. Switching phenomena take place in thin the thick samples. Holding voltage is different with the thickness of the samples and the characteristics of switching in the thin and thick samhles are similar. When square wave pulse voltage is applied, delay time is detected to 5.mu.sec by oscilloscpoe.