한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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- Pages.308-309
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- 2016
Optimized ultra-thin tunnel oxide layer characteristics by PECVD using N2O plasma growth for high efficiency n-type Si solar cell
- Jeon, Minhan (College of Information and Communication Engineering, Sungkyunkwan University) ;
- Kang, Jiyoon (College of Information and Communication Engineering, Sungkyunkwan University) ;
- Oh, Donghyun (College of Information and Communication Engineering, Sungkyunkwan University) ;
- Shim, Gyeongbae (College of Information and Communication Engineering, Sungkyunkwan University) ;
- Kim, Shangho (Department of Energy Science, Sungkyunkwan University) ;
- Balaji, Nagarajan (Department of Energy Science, Sungkyunkwan University) ;
- Park, Cheolmin (Department of Energy Science, Sungkyunkwan University) ;
- Song, Jinsoo (Energy Env ironmental Engineering, Silla University) ;
- Yi, Junsin (College of Information and Communication Engineering, Sungkyunkwan University)
- 발행 : 2016.02.17
초록
Reducing surface recombination is a critical factor for high efficiency silicon solar cells. The passivation process is for reducing dangling bonds which are carrier. Tunnel oxide layer is one of main issues to achieve a good passivation between silicon wafer and emitter layer. Many research use wet-chemical oxidation or thermally grown which the highest conversion efficiencies have been reported so far. In this study, we deposit ultra-thin tunnel oxide layer by PECVD (Plasma Enhanced Chemical Vapor Deposition) using