한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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- Pages.304.1-304.1
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- 2016
Plasma nitridation of atomic layer deposition-Al2O3 by NH3 in PECVD
- Cha, Ham cho rom (Graduate School of Energy Science & Technology, Chungnam National University) ;
- Cho, Young Joon (Graduate School of Energy Science & Technology, Chungnam National University) ;
- Chang, Hyo Sik (Graduate School of Energy Science & Technology, Chungnam National University)
- 발행 : 2016.02.17
초록
We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of
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