Analysis of Quantum Effects Concerning Ultra-thin Gate-all-around Nanowire FET for Sub 14nm Technology

In this work, we investigate the quantum effects exhibited from ultra-thin GAA(gate-all-around) Nanowire FETs for Sub 14nm Technology. We face designing challenges particularly short channel effects (SCE). However traditional MOSFET SCE models become invalid due to unexpected quantum effects. In this paper, we investigated various performance factors of the GAA Nanowire FET structure, which is promising future device. We observe a variety of quantum effects that are not seen when large scale. Such are source drain tunneling due to short channel lengths, drastic threshold voltage increase caused by quantum confinement for small channel area, leakage current through thin gate oxide by tunneling, induced source barrier lowering by fringing field from drain enhanced by high k dielectric, and lastly the I-V characteristic dependence on channel materials and transport orientations owing to quantum confinement and valley splitting. Understanding these quantum phenomena will guide to reducing SCEs for future sub 14nm devices.